Modification of the electrical properties of polyimide by irradiation with 80 keV Xe ionsTIANXIANG CHEN; SHUDE YAO; KUN WANG et al.Surface & coatings technology. 2009, Vol 203, Num 24, pp 3718-3721, issn 0257-8972, 4 p.Article

Characterization of laser waveguides in Nd:CNGG crystals formed by low fluence carbon ion implantationWANG, Liang-Ling; YU, Yong-Gui.Applied surface science. 2010, Vol 256, Num 8, pp 2616-2619, issn 0169-4332, 4 p.Article

Selective etching in LiNbO₃ combined of MeV O and Si ion implantation with wet-etch techniqueLEI WANG; WANG, Ke-Ming; RUI NIE et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 5081-5084, issn 0257-8972, 4 p.Conference Paper

An He-implanted optical planar waveguide in an Nd:YGG laser crystal preserving fluorescence propertiesZHAO, Jin-Hua; QING HUANG; PENG LIU et al.Applied surface science. 2011, Vol 257, Num 16, pp 7310-7313, issn 0169-4332, 4 p.Article

Creating surface nanostructures in GaAs by MeV Au²⁺ ionsSINHA, O. P; GANESAN, V; SOM, T et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2490-2492, issn 0257-8972, 3 p.Conference Paper

Ion beam induced modification in GeO_x thin films: A phase separation studyBATRA, Y; KABIRAJ, D; KUMAR, S et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2415-2417, issn 0257-8972, 3 p.Conference Paper

Ion beam synthesis of germanium nanostructuresJOSHI, Kapil U; NARSALE, A. M; KANJILAL, D et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2476-2478, issn 0257-8972, 3 p.Conference Paper

Ion beam etched diffraction gratings in fused quartz and lithium niobateYANG JIAO; WANG, Ke-Ming; WANG, Xue-Lin et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 5046-5049, issn 0257-8972, 4 p.Conference Paper

Effects of X-ray irradiation on optical property and defect relaxation in MeV ion-implanted MgOOGISO, Hisato; NAKANO, Shizuka.Surface & coatings technology. 2005, Vol 196, Num 1-3, pp 15-18, issn 0257-8972, 4 p.Conference Paper

Processing for optically active erbium in silicon by film co-deposition and ion-beam mixingABEDRABBO, S; MOHAMMED, Q; FIORY, A. T et al.Applied surface science. 2009, Vol 255, Num 8, pp 4503-4511, issn 0169-4332, 9 p.Article

Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO₂JOSHI, Kapil U; KABIRAJ, D; NARSALE, A. M et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2482-2485, issn 0257-8972, 4 p.Conference Paper

A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; SYMEONIDES, Chrys I et al.Microelectronics journal. 2008, Vol 39, Num 5, pp 737-739, issn 0959-8324, 3 p.Article

Positron and deuteron depth profiling in helium-3-implanted electrum-like alloyGRYNSZPAN, R. I; BACLET, N; DARQUE, A et al.Applied surface science. 2006, Vol 252, Num 9, pp 3252-3255, issn 0169-4332, 4 p.Conference Paper

Focused ion beam induced nanodot and nanofiber growthSCHOENDORFER, C; LUGSTEIN, A; BERTAGNOLLI, E et al.Microelectronic engineering. 2006, Vol 83, Num 4-9, pp 1491-1494, issn 0167-9317, 4 p.Conference Paper

Thermoluminescence response of CaS:Bi³⁺ nanophosphor exposed to 200 MeV Ag⁺¹⁵ ion beamKUMAR, Vinay; SWART, H. C; NTWAEABORWA, O. M et al.Optical materials (Amsterdam). 2009, Vol 32, Num 1, pp 164-168, issn 0925-3467, 5 p.Article

Nano-and micro-scale patterning of Si (1 0 0) under keV ion irradiationKATHARRIA, Yashpal S; KUMAR, Sandeep; TARUN SHARMA, A et al.Applied surface science. 2007, Vol 253, Num 16, pp 6824-6828, issn 0169-4332, 5 p.Article

Effects of Al ion implantation on the strength of Al₂O₃ particlesOGISO, Hisato; YOSHIDA, Mikiko; NAKANO, Shizuka et al.Surface & coatings technology. 2007, Vol 201, Num 19-20, pp 8180-8184, issn 0257-8972, 5 p.Conference Paper

Simulation studies of radiation induced segregation in 316SSFERNANDES, R. P; PATEL, N. K; MIOTELLO, A et al.Surface & coatings technology. 2007, Vol 201, Num 19-20, pp 8424-8426, issn 0257-8972, 3 p.Conference Paper

Surface modification of a polytetrafluoroethylene film with cyclotron ion beams and its evaluationYOON JEONG CHOI; MI SOOK KIM; NOH, Insup et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 5724-5728, issn 0257-8972, 5 p.Conference Paper

Degradation of the scintillation yield of anthracene under high-fluence carbon ion beamsBROGGIO, D; JUNG, J. M; BARILLON, R et al.Radiation measurements. 2005, Vol 39, Num 3, pp 283-287, issn 1350-4487, 5 p.Article

Influence of self-irradiation damages on the superconducting behaviour of Pu-based compoundsJUTIER, Frédéric; GRIVEAU, Jean-Christophe; COLINEAU, Eric et al.Physica. B, Condensed matter. 2005, Vol 359-61, pp 1078-1080, issn 0921-4526, 3 p.Conference Paper

White light interferometry for quantitative surface characterization in ion sputtering experimentsBARYSHEV, S. V; ZINOVEV, A. V; TRIPA, C. E et al.Applied surface science. 2012, Vol 258, Num 18, pp 6963-6968, issn 0169-4332, 6 p.Article

Defect creation in diamond by hydrogen plasma treatment at room temperatureYAMAZAKI, Y; ISHIKAWA, K; SAMUKAWA, S et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 327-330, issn 0921-4526, 4 p.Conference Paper

Study of structure and surface modification of silicon-on-insulator (SOI) devices synthesized by dual ion implantationPOLJI, Rucha H; VADAV, A. D; DUBEY, S. K et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2654-2657, issn 0257-8972, 4 p.Conference Paper

Shallow junction characteristics due to low temperature BGe molecular ion implantation into siliconLIANG, J. H; WU, C. H.Applied surface science. 2014, Vol 310, pp 230-234, issn 0169-4332, 5 p.Conference Paper